A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array” was published by researchers at Samsung Electronics and ...
High Bandwidth Memory (HBM) is the commonly used type of DRAM for data center GPUs like NVIDIA's H200 and AMD's MI325X. High Bandwidth Flash (HBF) is a stack of flash chips with an HBM interface. What ...
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